Elsevier / Academic Press, 2011. — 377 p. — (Series: Semiconductors and Semimetals, volume 84). — ISBN: 978-0-12-381337-4.
Research in infrared photon detectors led to many new infrared detection devices, materials, and large-format infrared focal plane arrays for imaging applications. Research activities in the areas of HgCdTe, strained-layer superlattices, quantum-well infrared detectors, homo- and heterojunction devices, quantum-dot infrared detectors, blocked impurity band (BIB) detectors, and quantum wells for far-infrared detection have been very intense over last two decades. Therefore, we collected a comprehensive review of the various topics related to the infrared photon detectors based on II–VI and III–V compound semiconductor materials. We hope this volume will provide a valuable reference for the researchers in the field of infrared detectors, related fields, and for those individuals like graduate students, scientists, and engineers who are interested in learning about these subjects.
The six chapters in volume 84 of the Elsevier’s Semiconductors and Semimetals cover the following topics: Chapter 1 describes the development of strained layer superlattice for infrared detection from inception to focal planes; Chapter 2 discusses the progress of quantum-well infrared photodetectors (QWIPs) in the last two decades, which culminated low-cost focal planes for commercial use; Chapter 3 discuss the quantum dots for infrared detection; Chapter 4 describes the quantum-well THz detectors; Chapter 5 describes the homo- and heterojunction interfacial workfunction internal photoemission detectors from ultraviolet to infrared detection; and Chapter 6 describes the advances made in long-wavelength infrared HgCdTe detectors.